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H54G46BYYPX053

LPDDR4

H54G46BYYPX053

LPDDR4

SK hynix/海力士

2GB

4266Mbps

1.8V / 1.1V / 1.1V

200Ball

MP

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H54G36AYRBX257

LPDDR4

H54G36AYRBX257

LPDDR4

SK hynix/海力士

1GB

4266Mbps

1.8V / 1.1V / 0.6V

200Ball

CS

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MT53D1024M32D4DT-046 WT

LPDDR4

MT53D1024M32D4DT-046 WT

LPDDR4

MICRON/美光

32Gb

x32

DDR4-4266

D9WQG

Production

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K4F8E304HB-MGCJ

LPDDR4

K4F8E304HB-MGCJ

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

3733 Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

EOL

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K4F4E3S4HF-MGCJ

LPDDR4

K4F4E3S4HF-MGCJ

DRAM LPDDR4

SAMSUNG/三星

4Gb

x32

3733Mbps

1.8/1.1/1.1V

BGA

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MT53D512M32D2DS-046 AAT:D

LPDDR4

MT53D512M32D2DS-046 AAT:D

LPDDR4

MICRON/美光

16Gb

512M x32

2133MHz

0.6V

-40C to +105C

200-ball WFBGA

4266MTPS

CL = Programmable

COMPONENT

LPDDR4 16G X32 WFBGA

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MT53E768M32D4DT-053 AAT:E

LPDDR4

MT53E768M32D4DT-053 AAT:E

LPDDR4

MICRON/美光

24Gb

768M x32

1866MHz

0.6V

-40C to +105C

200-ball VFBGA

Production

3733MTPS

CL = Programmable

COMPONENT

LPDDR4 24G X32 VFBGA

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MT53D1024M32D4DT-046 AIT:D

LPDDR4

MT53D1024M32D4DT-046 AIT:D

LPDDR4

MICRON/美光

32Gb

1G x32

2133MHz

0.6V

-40C to +95C

200-ball VFBGA

End of Life

4266MTPS

CL = Programmable

LPDDR4 32G X32 VFBGA

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K4FBE3D4HM-TFCL

LPDDR4

K4FBE3D4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FBE3D4HM-GFCL

LPDDR4

K4FBE3D4HM-GFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

3733Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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MT53E1G32D4NQ-046 WT:F

LPDDR4

MT53E1G32D4NQ-046 WT:F

DRAM LPDDR4

MICRON/美光

32Gb

x32

-25°C~85°C

FBGA

D9ZGW

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K4FBE3D4HM-THCL

LPDDR4

K4FBE3D4HM-THCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

BGA

Mass Production

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MT53E2G32D4NQ-046WT:A

LPDDR4

MT53E2G32D4NQ-046WT:A

DRAM LPDDR4

MICRON/美光

64Gb

x32

-25°C~85°C

FBGA

D9ZCL

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K4FHE3D4HA-TFCL

LPDDR4

K4FHE3D4HA-TFCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-GFCL

LPDDR4

K4FHE3D4HA-GFCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-THCL

LPDDR4

K4FHE3D4HA-THCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4F6E3S4HM-TFCL

LPDDR4

K4F6E3S4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4F6E3S4HM-THCL

LPDDR4

K4F6E3S4HM-THCL

DRAM LPDDR4

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

Mass Production

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MT53E2G32D8QD-046 WT:E

LPDDR4

MT53E2G32D8QD-046 WT:E

DRAM LPDDR4

MICRON/美光

128Gb

x32

-25°C~85°C

FBGA

D9WLV

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K4F8E3S4HD-GHCL

LPDDR4

K4F8E3S4HD-GHCL

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

Mass Production

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