第17頁_DRAM_產(chǎn)品類別_產(chǎn)品中心_深圳市迅豐達(dá)電子科技有限公司

產(chǎn)品品牌

產(chǎn)品品牌

三星海力士鎧俠美光南亞閃迪
產(chǎn)品類別

DRAM SSD eMMC eMCP FLASH UFS

產(chǎn)品型號(hào)

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型號(hào)	品牌	DRAM類型	容量	架構(gòu)	速率	工作電壓	工作溫度	產(chǎn)品詳情
MT53E2G32D4NQ-046 WT:C	LPDDR4	MT53E2G32D4NQ-046 WT:C	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA				D8BQX				點(diǎn)擊查看
MT53E2G32D4NQ-046 WT:A	LPDDR4	MT53E2G32D4NQ-046 WT:A	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA				D9ZCL				點(diǎn)擊查看
MT53E1G32D4NQ-046 WT:E	LPDDR4	MT53E1G32D4NQ-046 WT:E	DRAM LPDDR4	MICRON/美光	32Gb	1Gx32	4266Mbps	1.1 V	-30°C~85°C	VFBGA-200	Production							點(diǎn)擊查看
MT53E1G32D2NP-046 WT:A	LPDDR4	MT53E1G32D2NP-046 WT:A	DRAM LPDDR4	MICRON/美光	32Gb	x32			-25°C~85°C	FBGA				D9ZCK				點(diǎn)擊查看
MT53E512M32D2NP-053 RS WT:E	LPDDR4	MT53E512M32D2NP-053 RS WT:E	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32	3733Mbps	1.1V	-30°C~85°C	BGA	Production							點(diǎn)擊查看
NT6AN256T32AV-J1	LPDDR4	NT6AN256T32AV-J1	LPDDR4	Nanya/南亞	8Gb	x32	4267Mbps	1.1V	-30C~105C	200-ball FBGA			Developing		Commercial	低功率行動(dòng)DRAM-LPDDR4	點(diǎn)擊查看
MT53E512M32D2NP-046 WT:E	LPDDR4	MT53E512M32D2NP-046 WT:E	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32	4266Mbps	1.1V	-30°C~85°C	FBGA-200	Production							點(diǎn)擊查看
NT6AN512T32AV-J2	LPDDR4	NT6AN512T32AV-J2	LPDDR4	Nanya/南亞	16Gb	x32	3733Mbps	1.1V	-30C~105C	200-ball FBGA			Developing		Commercial	低功率行動(dòng)DRAM-LPDDR4	點(diǎn)擊查看
MT53D512M64D4HR-053 WT:D	LPDDR4	MT53D512M64D4HR-053 WT:D	DRAM LPDDR4	MICRON/美光	32Gb	x64			-30°C~85°C	TSOP				D9VKN				點(diǎn)擊查看
MT53D512M32D2DS-053 WT:D TR	LPDDR4	MT53D512M32D2DS-053 WT:D TR	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32		1.1V	-30°C~85°C	WFBGA-200								點(diǎn)擊查看
MT53D512M32D2DS-053 WT:D	LPDDR4	MT53D512M32D2DS-053 WT:D	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32		1.1V	-25°C~85°C	FBGA-200				D9WHZ				點(diǎn)擊查看
MT53D1024M32D4DT-053 WT:D	LPDDR4	MT53D1024M32D4DT-053 WT:D	DRAM LPDDR4	MICRON/美光	32Gb	1Gx32		1.1V	-30°C~85°C	VFBGA-200								點(diǎn)擊查看
MT53E256M32D2DS-053 WT:B	LPDDR4	MT53E256M32D2DS-053 WT:B	DRAM LPDDR4	MICRON/美光	8Gb	x32	3733 Mb/s	1.8V/1.1V/1.1V	-30°C~85°C	FBGA-200		10mm×14.5mm×0.8mm		D9WRB				點(diǎn)擊查看
H9HCNNN8KUMLHR-NLNR	LPDDR4	H9HCNNN8KUMLHR-NLNR	LPDDR4	SK hynix/海力士	1GB		3200Mbps		1.8V / 1.1V / 1.1V	200Ball	MP						點(diǎn)擊查看
K4FHE3D4HM-MHCJ	LPDDR4	K4FHE3D4HM-MHCJ	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	3733Mbps	1.8/1.1/1.1V	-40℃~105℃	FBGA-200	EOL							點(diǎn)擊查看
K4F8E3S4HD-MGCL	LPDDR4	K4F8E3S4HD-MGCL	DRAM LPDDR4	SAMSUNG/三星	8Gb	x32	4266Mbps	1.8/1.1/1.1V	-25°C~85°C	FBGA-200	Mass Production							點(diǎn)擊查看
K4F6E3S4HB-KHCL	LPDDR4	K4F6E3S4HB-KHCL	LPDDR4	SAMSUNG/三星	16 Gb	x32	4266 Mbps	1.8 / 1.1 / 1.1 V	-40 ~ 105 °C	200 FBGA	Mass Production						點(diǎn)擊查看
H9HCNNNBKUMLHR-NMO	LPDDR4	H9HCNNNBKUMLHR-NMO	DRAM LPDDR4	SK HYNIX/海力士	2GB	x16	3733Mbps	1.8V/1.1V/1.1V	-40℃~105℃	FBGA-200	Mass Production							點(diǎn)擊查看
H9HKNNNFBMMVAR-NEH	LPDDR4	H9HKNNNFBMMVAR-NEH	DRAM LPDDR4	SK HYNIX/海力士	2GB	x16	3733Mbps	1.8V/1.1V/1.1V	-40℃~105℃	FBGA-200	Mass Production							點(diǎn)擊查看
H9HCNNNDAMMLHR-NEE	LPDDR4	H9HCNNNDAMMLHR-NEE	DRAM LPDDR4	SK HYNIX/海力士						FBGA-200								點(diǎn)擊查看

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