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型號
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規(guī)格書
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品牌
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DRAM類型
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容量
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架構(gòu)
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速率
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工作電壓
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工作溫度
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產(chǎn)品詳情
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K4B4G0846E-BYMA |
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LPDDR3 |
K4B4G0846E-BYMA |
DRAM LPDDR3 |
SAMSUNG/三星 |
4Gb |
512Mx8 |
1866Mbps |
1.35V |
0°C~85°C |
FBGA-78 |
Mass Production |
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點(diǎn)擊查看 |
NT6CL256T32BM-H2 |
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LPDDR3 |
NT6CL256T32BM-H2 |
DRAM LPDDR3 |
NANYA/南亞 |
8Gb |
x32 |
1600Mbps |
1.2V |
-25°C~85°C |
BGA-178 |
Mass Production |
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10.5mm×11.5mm×0.8mm |
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商業(yè)級 |
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點(diǎn)擊查看 |
NT6CL256M32AM-H1 |
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LPDDR3 |
NT6CL256M32AM-H1 |
DRAM LPDDR3 |
NANYA/南亞 |
8Gb |
x32 |
1866Mbps |
1.2V |
-35°C~105°C |
BGA-178 |
Developing |
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10.5mm×11.5mm×0.83mm |
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商業(yè)級 |
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點(diǎn)擊查看 |
K4E6E304EC-EGCF |
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LPDDR3 |
K4E6E304EC-EGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
16Gb |
512Mx32 |
1866Mbps |
1.8V/1.2V |
-25°C~85°C |
FBGA-178 |
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點(diǎn)擊查看 |
NT6CL512T32AM-H0 |
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LPDDR3 |
NT6CL512T32AM-H0 |
DRAM LPDDR3 |
NANYA/南亞 |
16Gb |
x32 |
2133Mbps |
1.2V |
-30°C~105°C |
FBGA-178 |
Developing |
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10.5mm×11.5mm×0.83mm |
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商業(yè)級 |
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點(diǎn)擊查看 |
H9CCNNNCLGALAR-NVD |
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LPDDR3 |
H9CCNNNCLGALAR-NVD |
DRAM LPDDR3 |
SK HYNIX/海力士 |
32Gb |
512Mx32 |
1066MHz |
1.2V |
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BGA |
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點(diǎn)擊查看 |
H9CCNNNBJTALAR-NUD |
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LPDDR3 |
H9CCNNNBJTALAR-NUD |
DRAM LPDDR3 |
SK HYNIX/海力士 |
16GB |
512Mx32 |
1866MHz |
1.2V |
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FBGA-178 |
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點(diǎn)擊查看 |
H9CCNNNCLTCLAR-NUM |
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LPDDR3 |
H9CCNNNCLTCLAR-NUM |
DRAM LPDDR3 |
SK HYNIX/海力士 |
32GB |
512Mx32 |
1866MHz |
1.2V |
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FBGA-178 |
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點(diǎn)擊查看 |
H9CCNNN8JTBLAR-NUD |
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LPDDR3 |
H9CCNNN8JTBLAR-NUD |
DRAM LPDDR3 |
SK HYNIX/海力士 |
8GB |
256Mx32 |
933Mbps |
1.2V |
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BGA |
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點(diǎn)擊查看 |
K3QF3F30BM-AGCF |
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LPDDR3 |
K3QF3F30BM-AGCF |
LPDDR3 |
SAMSUNG/三星 |
16 Gb |
x64 |
1866 Mbps |
1.8 / 1.2 / 1.2 V |
-25 ~ 85 °C |
253 FBGA |
EOL |
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點(diǎn)擊查看 |
K4E8E324EB-EGCG |
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LPDDR3 |
K4E8E324EB-EGCG |
LPDDR3 |
SAMSUNG/三星 |
8 Gb |
x32 |
2133 Mbps |
1.8 / 1.2 / 1.2 V |
-25 ~ 85 °C |
178FBGA |
批量生產(chǎn) |
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三代低功耗雙倍數(shù)據(jù)率同步動態(tài)隨機(jī)存儲器 |
點(diǎn)擊查看 |
K3QF6F60AM-FGCF |
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LPDDR3 |
K3QF6F60AM-FGCF |
LPDDR3 |
SAMSUNG/三星 |
24Gb |
x64 |
1866 Mbps |
1.8 / 1.2 / 1.2 V |
-25 ~ 85 °C |
256FBGA |
Mass Production |
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點(diǎn)擊查看 |
KMGX6001BA-B514009 |
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LPDDR3 |
KMGX6001BA-B514009 |
LPDDR3 |
SAMSUNG/三星 |
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1866 Mbps |
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221 FBGA |
Mass Production |
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eMMC 5.1 |
32 GB |
24 Gb |
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多芯片封裝 |
點(diǎn)擊查看 |
H9CCNNN4GTMLAR |
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LPDDR3 |
H9CCNNN4GTMLAR |
DRAM LPDDR3 |
SK HYNIX/海力士 |
4Gb |
x32 |
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1.8V/1.2V/1.2V |
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FBGA-178 |
Mass production |
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Low Power |
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點(diǎn)擊查看 |
H9CCNNNCPTALBR-NUD |
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LPDDR3 |
H9CCNNNCPTALBR-NUD |
DRAM LPDDR3 |
SK HYNIX/海力士 |
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BGA |
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點(diǎn)擊查看 |
H9CCNNNBLTALAR |
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LPDDR3 |
H9CCNNNBLTALAR |
DRAM LPDDR3 |
SK HYNIX/海力士 |
16Gb |
x32 |
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1.8V/1.2V/1.2V |
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FBGA-253 |
Mass production |
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Low Power |
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點(diǎn)擊查看 |
H9CCNNNBJTALAR-NVD |
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LPDDR3 |
H9CCNNNBJTALAR-NVD |
DRAM LPDDR3 |
SK HYNIX/海力士 |
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BGA-178 |
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點(diǎn)擊查看 |
H9CCNNNBLTALAR-NVDR |
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LPDDR3 |
H9CCNNNBLTALAR-NVDR |
LPDDR3 |
SK hynix/海力士 |
16Gb |
x32 |
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1.8V-1.2V-1.2V |
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PKG：178 |
Mass production |
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點(diǎn)擊查看 |
H54G56BYYQX046 |
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LPDDR4 |
H54G56BYYQX046 |
LPDDR4 |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 1.1V |
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200Ball |
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MP |
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Spec： UFS 2.0 |
點(diǎn)擊查看 |
H54GE6AYRHX270 |
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LPDDR4 |
H54GE6AYRHX270 |
LPDDR4 |
SK hynix/海力士 |
6GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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CS |
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點(diǎn)擊查看 |
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