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型號
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規(guī)格書
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品牌
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DRAM類型
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容量
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架構(gòu)
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速率
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工作電壓
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工作溫度
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產(chǎn)品詳情
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H54G56BYYVX046 |
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LPDDR4 |
H54G56BYYVX046 |
LPDDR4 |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 1.1V |
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200Ball |
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MP |
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點(diǎn)擊查看 |
H54G56BYYPX046 |
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LPDDR4 |
H54G56BYYPX046 |
LPDDR4 |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 1.1V |
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200Ball |
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MP |
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點(diǎn)擊查看 |
H54G56BYYJX089 |
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LPDDR4X |
H54G56BYYJX089 |
LPDDR4X |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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200Ball |
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MP |
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點(diǎn)擊查看 |
H54G66AYZQX106 |
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LPDDR4X |
H54G66AYZQX106 |
LPDDR4X |
SK hynix/海力士 |
8GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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556Ball |
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MP |
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點(diǎn)擊查看 |
H54G66BYYVX104 |
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LPDDR4X |
H54G66BYYVX104 |
LPDDR4X |
SK hynix/海力士 |
8GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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200Ball |
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MP |
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點(diǎn)擊查看 |
H54G68CYRBX248R |
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LPDDR4X |
H54G68CYRBX248R |
LPDDR4X |
SK hynix/海力士 |
8GB |
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FBGA |
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點(diǎn)擊查看 |
H9HKNNNFBMAUDR-NEH |
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LPDDR4X |
H9HKNNNFBMAUDR-NEH |
DRAM LPDDR4X |
SK HYNIX/海力士 |
64GB |
1Gx64 |
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1.1V |
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FBGA-556 |
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點(diǎn)擊查看 |
K4UJE3T4AA-MGCL |
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LPDDR4X |
K4UJE3T4AA-MGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
64GB |
x32 |
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BGA |
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點(diǎn)擊查看 |
K3UH7H70BM-AGCL |
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LPDDR4X |
K3UH7H70BM-AGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
64GB |
x64 |
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BGA |
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點(diǎn)擊查看 |
K4U6E3S4AB-MGCL |
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LPDDR4X |
K4U6E3S4AB-MGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
16Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Mass Production |
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點(diǎn)擊查看 |
K3UH7H70AM-JGCL |
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LPDDR4X |
K3UH7H70AM-JGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
64GB |
x64 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-432 |
Mass Production |
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點(diǎn)擊查看 |
K3UH5H50AM-JGCL |
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LPDDR4X |
K3UH5H50AM-JGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
32Gb |
x64 |
4266 Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-432 |
Mass Production |
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點(diǎn)擊查看 |
K3UH5H50AM-JGCR |
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LPDDR4X |
K3UH5H50AM-JGCR |
DRAM LPDDR4X |
SAMSUNG/三星 |
32Gb |
x64 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-432 |
Mass Production |
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點(diǎn)擊查看 |
K3UH5H5OMM-AGCJ |
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LPDDR4X |
K3UH5H5OMM-AGCJ |
DRAM LPDDR4X |
SAMSUNG/三星 |
32Gb |
x64 |
3733Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-556 |
Mass Production |
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點(diǎn)擊查看 |
K4UJE3Q4AA-TFCL |
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LPDDR4X |
K4UJE3Q4AA-TFCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
48Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-40°C~95°C |
FBGA-200 |
Mass Production |
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點(diǎn)擊查看 |
K4UJE3Q4AA-THCL |
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LPDDR4X |
K4UJE3Q4AA-THCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
48Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-40℃~105℃ |
FBGA-200 |
Mass Production |
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點(diǎn)擊查看 |
K4UBE3D4AM-TFCL |
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LPDDR4X |
K4UBE3D4AM-TFCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
32Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-40°C~95°C |
FBGA-200 |
Mass Production |
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點(diǎn)擊查看 |
K4UBE3D4AM-THCL |
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LPDDR4X |
K4UBE3D4AM-THCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
32Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-40℃~105℃ |
FBGA-200 |
Mass Production |
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點(diǎn)擊查看 |
K4UCE3Q4AA-MGCL |
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LPDDR4X |
K4UCE3Q4AA-MGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
64Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Mass Production |
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點(diǎn)擊查看 |
K4UCE3Q4AA-MGCR |
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LPDDR4X |
K4UCE3Q4AA-MGCR |
DRAM LPDDR4X |
SAMSUNG/三星 |
64GB |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Sample |
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點(diǎn)擊查看 |
:
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2207226434
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