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型號
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規(guī)格書
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品牌
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DRAM類型
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容量
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架構(gòu)
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速率
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工作電壓
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工作溫度
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產(chǎn)品詳情
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MT46H32M16LFBF-5 IT:C TR |
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LPDDR |
MT46H32M16LFBF-5 IT:C TR |
DRAM LPDDR |
MICRON/美光 |
512Mb |
32Mx16 |
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1.7V~1.95V |
-40℃~85℃ |
VFBGA-60 |
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點(diǎn)擊查看 |
K4EBE304EB-EGCF |
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LPDDR3 |
K4EBE304EB-EGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
32Gb |
x32 |
1866Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
Mass Production |
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點(diǎn)擊查看 |
K4EBE304EC-EGCF |
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LPDDR3 |
K4EBE304EC-EGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
32Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
Mass Production |
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點(diǎn)擊查看 |
K3QF4F40BM-AGCF |
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LPDDR3 |
K3QF4F40BM-AGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
32Gb |
x64 |
1866Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-253 |
Mass Production |
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點(diǎn)擊查看 |
MT52L1G32D4PG-107 WT:B |
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LPDDR3 |
MT52L1G32D4PG-107 WT:B |
DRAM LPDDR3 |
MICRON/美光 |
32Gb |
x32 |
1866mb/s |
1.8V/1.2V |
-30°C~85°C |
FBGA-178 |
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D9SSK |
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1.071ns |
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點(diǎn)擊查看 |
MT52L512M32D2PF-107 WT:B |
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LPDDR3 |
MT52L512M32D2PF-107 WT:B |
DRAM LPDDR3 |
MICRON/美光 |
16Gb |
x32 |
1866mb/s |
1.8V/1.2V |
-30°C~85°C |
FBGA-178 |
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D9SSF |
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1.071ns |
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點(diǎn)擊查看 |
MT52L256M32D1PF-107 WT:B |
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LPDDR3 |
MT52L256M32D1PF-107 WT:B |
DRAM LPDDR3 |
MICRON/美光 |
8Gb |
x32 |
1866mb/s |
1.8V/1.2V |
-30°C~85°C |
FBGA-178 |
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D9SRZ |
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1.071ns |
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點(diǎn)擊查看 |
MT52L256M32D1PF-093 WT:B |
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LPDDR3 |
MT52L256M32D1PF-093 WT:B |
DRAM LPDDR3 |
MICRON/美光 |
8Gb |
x32 |
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1.2V |
-30°C~85°C |
FBGA-178 |
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點(diǎn)擊查看 |
NT6CL512T32AM-H1 |
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LPDDR3 |
NT6CL512T32AM-H1 |
LPDDR3 |
Nanya/南亞 |
16Gb |
x32 |
1866Mbps |
1.2V |
-35C~105C |
178-ball BGA |
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Developing |
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Commercial |
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點(diǎn)擊查看 |
K4E8E324EB-EGCF |
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LPDDR3 |
K4E8E324EB-EGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
48Gb |
x32 |
1866Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
Mass Production |
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點(diǎn)擊查看 |
NT6CL128M32DM-H1 |
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LPDDR3 |
NT6CL128M32DM-H1 |
LPDDR3 |
Nanya/南亞 |
4Gb |
x32 |
1866Mbps |
1.2V |
-30C~105C |
178-ball BGA |
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Developing |
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Commercial |
低功率行動DRAM-LPDDR3 |
點(diǎn)擊查看 |
K4EBE304ED-EGCG |
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LPDDR3 |
K4EBE304ED-EGCG |
DRAM LPDDR3 |
SAMSUNG/三星 |
32Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
EOL |
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點(diǎn)擊查看 |
K4EBE304EC-EGCG |
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LPDDR3 |
K4EBE304EC-EGCG |
DRAM LPDDR3 |
SAMSUNG/三星 |
32Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
EOL |
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點(diǎn)擊查看 |
K4E8E324ED-EGCG |
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LPDDR3 |
K4E8E324ED-EGCG |
DRAM LPDDR3 |
SAMSUNG/三星 |
8Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
EOL |
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點(diǎn)擊查看 |
K4E8E324EB-AGCF |
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LPDDR3 |
K4E8E324EB-AGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
8Gb |
256Mx32 |
1866Mbps |
1.8V/1.2V |
-25°C~85°C |
FBGA-168 |
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點(diǎn)擊查看 |
K4E6E304EC-AGCF |
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LPDDR3 |
K4E6E304EC-AGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
16Gb |
x32 |
1866Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-168 |
Mass Production |
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點(diǎn)擊查看 |
K4E6E304ED-EGCG |
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LPDDR3 |
K4E6E304ED-EGCG |
DRAM LPDDR3 |
SAMSUNG/三星 |
16Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
EOL |
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點(diǎn)擊查看 |
K4E6E304EC-EGCG |
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LPDDR3 |
K4E6E304EC-EGCG |
DRAM LPDDR3 |
SAMSUNG/三星 |
16Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
EOL |
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點(diǎn)擊查看 |
K4E6E304EB-EGCF |
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LPDDR3 |
K4E6E304EB-EGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
16Gb |
x32 |
186 Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
Mass Production |
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點(diǎn)擊查看 |
K4B4G1646E-BYK0 |
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LPDDR3 |
K4B4G1646E-BYK0 |
DRAM LPDDR3 |
SAMSUNG/三星 |
4Gb |
512Mx8 |
1600Mbps |
1.35V |
0°C~85°C |
FBGA-96 |
Mass Production |
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點(diǎn)擊查看 |
:
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