For more detailed information, pleaseContact Us ;
model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K4A4G085WE-BCRC
DDR4
DRAM DDR4
SAMSUNG/三星
4Gb
512Mx8
2400Mbps
1.2V
0°C~85°C
FBGA-78
Mass Production
Click view
NT5AD512M16C4-HR
NANYA/南亞
8Gb
x16
2666Mbps
0°C~95°C
BGA-96
Developing
7.5mm×13mm×0.8mm
商業(yè)級
NT5AD512M16A4-HR
FBGA-96
NT5AD256M16D4-HR
TFBGA-96
K4A4G165WE-BCWE
256M x 16
3200 Mbps
H5ANBG6NAMR-XNC
SK HYNIX/海力士
32Gb
3200Mbps
0℃~85℃
H5ANAG6NCMR-XNC
16Gb
H5ANAG6NCMR-VKC
16G
1Gx16
K4A8G165WC-BCTD
8 Gb
512M x 16
2666 Mbps
1.2 V
0 ~ 85 °C
96 FBGA
H5ANAG6NDMR-XNC
Mass production
H5ANAG6NCJR-XNC
FCBGA-96
H5AN8G8NDJR-XNC
x8
FCBGA-78
H5AN8G8NCJR-VKC
H5AN8G6NDJR-XNCR
H5AN8G6NDJR-XNC
H5AN8G6NCJR-XNC
H5AN8G6NCJR-VKC
H5AN4G8NBJR-VKC
H5AN4G6NBJR-VKC
M321RAGA0B20-CWK
DDR5
DRAM DDR5
128GB
4800Mbps
1.1V
BGA-288
RDIMM
4R x 4
(2H 3DS 8G x 4) x 40
Copyright (C) Since 2024 Shenzhen Xunfenda Electronic Technology Co., Ltd. All rights reserved 粵ICP備2021091299號-1
: 粵公網(wǎng)安備 粵公網(wǎng)安備44030402004852號