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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K4EBE304ED-EGCG
LPDDR3
DRAM LPDDR3
SAMSUNG/三星
32Gb
x32
2133Mbps
1.8/1.2/1.2V
-25°C~85°C
FBGA-178
EOL
Click view
K4EBE304EC-EGCG
K4E8E324ED-EGCG
8Gb
K4E8E324EB-AGCF
256Mx32
1866Mbps
1.8V/1.2V
FBGA-168
K4E6E304EC-AGCF
16Gb
Mass Production
K4E6E304ED-EGCG
K4E6E304EC-EGCG
K4E6E304EB-EGCF
186 Mbps
K4B4G1646E-BYK0
4Gb
512Mx8
1600Mbps
1.35V
0°C~85°C
FBGA-96
K4B4G0846E-BYMA
FBGA-78
NT6CL256T32BM-H2
NANYA/南亞
1.2V
BGA-178
10.5mm×11.5mm×0.8mm
商業(yè)級
NT6CL256M32AM-H1
-35°C~105°C
Developing
10.5mm×11.5mm×0.83mm
K4E6E304EC-EGCF
512Mx32
NT6CL512T32AM-H0
-30°C~105°C
H9CCNNNCLGALAR-NVD
SK HYNIX/海力士
1066MHz
BGA
H9CCNNNBJTALAR-NUD
16GB
1866MHz
H9CCNNNCLTCLAR-NUM
32GB
H9CCNNN8JTBLAR-NUD
8GB
933Mbps
K3QF3F30BM-AGCF
16 Gb
x64
1866 Mbps
1.8 / 1.2 / 1.2 V
-25 ~ 85 °C
253 FBGA
K4E8E324EB-EGCG
8 Gb
2133 Mbps
178FBGA
批量生產(chǎn)
三代低功耗雙倍數(shù)據(jù)率同步動態(tài)隨機存儲器
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