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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
H9HCNNN4KUMLHR-NME
LPDDR4
DRAM LPDDR4
SK HYNIX/海力士
0.5GB
x16
3733Mbps
1.8V/1.1V/1.1V
-25℃~85℃
FBGA-200
Mass production
Click view
H54G68CYRBX248N
8GB
H9HCNNNBKUMLXR-NEE
SK hynix/海力士
2GB
4266Mbps
1.8V / 1.1V / 1.1V
200Ball
MP
H9HCNNNBPUMLHR-NMER
H9HCNNBPUMLHR-NMN
H9HCNNNBPUMLHR-NLE
3200Mbps
H9HCNNN4KUMLHR-NMI
H9HCNNN8KUMLHR-NMI
1GB
H54G56BYYVX046
4GB
H54G56BYYPX046
H54G56BYYJX089
LPDDR4X
1.8V / 1.1V / 0.6V
H54G66AYZQX106
556Ball
H54G66BYYVX104
H54G68CYRBX248R
FBGA
H9HKNNNFBMAUDR-NEH
DRAM LPDDR4X
64GB
1Gx64
1.1V
FBGA-556
K4UJE3T4AA-MGCL
SAMSUNG/三星
x32
BGA
K3UH7H70BM-AGCL
x64
K4U6E3S4AB-MGCL
16Gb
1.8/1.1/0.6V
-25°C~85°C
Mass Production
K3UH7H70AM-JGCL
FBGA-432
K3UH5H50AM-JGCL
32Gb
4266 Mbps
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