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DRAM SSD eMMC eMCP FLASH UFS

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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
K3QF6F60AM-FGCF	LPDDR3	K3QF6F60AM-FGCF	LPDDR3	SAMSUNG/三星	24Gb	x64	1866 Mbps	1.8 / 1.2 / 1.2 V	-25 ~ 85 °C	256FBGA	Mass Production										Click view
KMGX6001BA-B514009	LPDDR3	KMGX6001BA-B514009	LPDDR3	SAMSUNG/三星			1866 Mbps			221 FBGA	Mass Production	eMMC 5.1	32 GB	24 Gb						多芯片封裝	Click view
H9CCNNN4GTMLAR	LPDDR3	H9CCNNN4GTMLAR	DRAM LPDDR3	SK HYNIX/海力士	4Gb	x32		1.8V/1.2V/1.2V		FBGA-178	Mass production								Low Power			Click view
H9CCNNNCPTALBR-NUD	LPDDR3	H9CCNNNCPTALBR-NUD	DRAM LPDDR3	SK HYNIX/海力士						BGA												Click view
H9CCNNNBLTALAR	LPDDR3	H9CCNNNBLTALAR	DRAM LPDDR3	SK HYNIX/海力士	16Gb	x32		1.8V/1.2V/1.2V		FBGA-253	Mass production								Low Power			Click view
H9CCNNNBJTALAR-NVD	LPDDR3	H9CCNNNBJTALAR-NVD	DRAM LPDDR3	SK HYNIX/海力士						BGA-178												Click view
H9CCNNNBLTALAR-NVDR	LPDDR3	H9CCNNNBLTALAR-NVDR	LPDDR3	SK hynix/海力士	16Gb	x32		1.8V-1.2V-1.2V		PKG：178	Mass production										Click view
H54G56BYYQX046	LPDDR4	H54G56BYYQX046	LPDDR4	SK hynix/海力士	4GB		4266Mbps	1.8V / 1.1V / 1.1V		200Ball					MP					Spec： UFS 2.0	Click view
H54GE6AYRHX270	LPDDR4	H54GE6AYRHX270	LPDDR4	SK hynix/海力士	6GB		4266Mbps	1.8V / 1.1V / 0.6V							CS						Click view
H54G46BYYPX053	LPDDR4	H54G46BYYPX053	LPDDR4	SK hynix/海力士	2GB		4266Mbps	1.8V / 1.1V / 1.1V		200Ball					MP						Click view
H54G36AYRBX257	LPDDR4	H54G36AYRBX257	LPDDR4	SK hynix/海力士	1GB		4266Mbps	1.8V / 1.1V / 0.6V		200Ball					CS						Click view
MT53D1024M32D4DT-046 WT	LPDDR4	MT53D1024M32D4DT-046 WT	LPDDR4	MICRON/美光	32Gb	x32	DDR4-4266			D9WQG					Production						Click view
K4F8E304HB-MGCJ	LPDDR4	K4F8E304HB-MGCJ	DRAM LPDDR4	SAMSUNG/三星	8Gb	x32	3733 Mbps	1.8/1.1/1.1V	-25°C~85°C	FBGA-200	EOL											Click view
K4F4E3S4HF-MGCJ	LPDDR4	K4F4E3S4HF-MGCJ	DRAM LPDDR4	SAMSUNG/三星	4Gb	x32	3733Mbps	1.8/1.1/1.1V		BGA												Click view
MT53D512M32D2DS-046 AAT:D	LPDDR4	MT53D512M32D2DS-046 AAT:D	LPDDR4	MICRON/美光	16Gb	512M x32	2133MHz	0.6V	-40C to +105C	200-ball WFBGA						4266MTPS	CL = Programmable	COMPONENT		LPDDR4 16G X32 WFBGA	Click view
MT53E768M32D4DT-053 AAT:E	LPDDR4	MT53E768M32D4DT-053 AAT:E	LPDDR4	MICRON/美光	24Gb	768M x32	1866MHz	0.6V	-40C to +105C	200-ball VFBGA					Production	3733MTPS	CL = Programmable	COMPONENT		LPDDR4 24G X32 VFBGA	Click view
MT53D1024M32D4DT-046 AIT:D	LPDDR4	MT53D1024M32D4DT-046 AIT:D	LPDDR4	MICRON/美光	32Gb	1G x32	2133MHz	0.6V	-40C to +95C	200-ball VFBGA					End of Life	4266MTPS	CL = Programmable			LPDDR4 32G X32 VFBGA	Click view
K4FBE3D4HM-TFCL	LPDDR4	K4FBE3D4HM-TFCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production											Click view
K4FBE3D4HM-GFCL	LPDDR4	K4FBE3D4HM-GFCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	3733Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production											Click view
MT53E1G32D4NQ-046 WT:F	LPDDR4	MT53E1G32D4NQ-046 WT:F	DRAM LPDDR4	MICRON/美光	32Gb	x32			-25°C~85°C	FBGA								D9ZGW				Click view

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