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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
H5TQ4G63EFR-TEC
DRAM
DDR SDRAM
SK HYNIX/海力士
4G
256Mx16
2133Mbps
1.5V
0°C~95°C
FBGA-96
Click view
MT53D512M32D2DS-046 WT:D
MICRON/美光
SDRAM存儲(chǔ)器
MT48LC16M16A2B4-6A IT:G
256Mb
16Mx16
3V~3.6V
-40℃~85℃
FBGA-54
MT48LC16M16A2P-6A IT:G TR
TSOP-54
MT46V64M8CY-5B:J TR
512Mb
64Mx8
2.5V~2.7V
0°C~70°C
FBGA-60
MT46H64M16LFBF-5 IT:B TR
1Gb
64Mx16
1.7V~1.95V
VFBGA-60
H25G9TCX8CX326A
-40°C~125°C
BGA
H5AN4G6NBJR-UHC
2400Mbps
1.2V
0°C~85°C
BGA-96
H5GC8H24AJR-R2C
GDDR5
SK hynix/海力士
8Gb
DDR 3.5GHz
1.35V / 1.35V
FCBGA
MP
MT51J256M32HF-80
x32
0C to +95C
D9TCB
Production
K4G80325FC-HC25TSO
三星
8 Gb
256M x 32
8.0 Gbps
170 FBGA
EOL
16K / 32 ms
K4G80325FC-HC25000
SAMSUNG三星
K4G80325FC-HC25
DRAM GDDR5
SAMSUNG/三星
256Mx32
FBGA-170
MT51J256M32HF-70
美光
D9SXD
H56G8H24AIR-S2C
GDDR6
DDR 7.0GHz
H56G42AS4DX014
16Gb
DDR 8.0GHz
CS
K4ZAF325BM-HC16
DRAM GDDR6
512Mx32
16.0Gbps
FBGA-180
MT61K256M32JE-14:A
1.31V~1.39V
TFBGA-180
K4Z80325BC-HC14
14.0 Gbps
Mass Production
K4Z80325BC-HC16
16.0 Gbps
180 FBGA
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