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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
MT40A1G16TB-062E IT:F
DDR4
MICRON/美光
16Gb
1G x16
1600MHz
1.2V
-40C to +95C
96-ball TFBGA
Production
3200MTPS
CL = 22
DDR4 16G X16 TFBGA
Click view
K4ABG085WA-MCTD
DRAM DDR4
SAMSUNG/三星
32Gb
4Gx8
2666Mbps
0°C~85°C
FBGA-78
Mass Production
MT40A2G16TBB-062E:F
2G x16
0C to +95C
DDR4 32G X16 TFBGA
K4AAG165WB-MCTD
1Gx16
FBGA-96
MT40A1G8SA-075:E
8Gb
1G x8
1333MHz
78-ball TFBGA
2666MTPS
CL = 19
DDR4 8G X8 TFBGA
K4AAG165WB-BCWE
4Gx4
3200Mbps
MT40A1G8SA-062E:E
K4AAG165WA-BIWE
-40°C~95°C
MT40A1G8SA-062E:R
0C to +95
MT40A1G8SA-062E IT:E
MT40A2G8SA-062E:F
2G x8
3200MTP
DDR4 16G X8 TFBGA
MT40A2G8JC-062E IT:E
D9ZFV
Sampling
Width:x8
MT40A1G16RC-062E:B
x16
0°C~95°C
FBGA
D9XPG
MT40A2G8JC-062E:E
x8
-40℃~85℃
MT40A512M16TB-062E:J
3200 MT/s
D9WWP
MT40A1G8SA-062E:J
D9WSM
MT40A4G4JC-062E
D9XPC
Width:x4
K4F8E304HB-MGCH
8GB
256Mx32
BGA
MT40A512M16JY-083E:B
D9TBK
K4A4G165WF-BCWE
4Gb
256Mx16
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