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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
PRN256M8V89CG8GQF-15E	DDR3	PRN256M8V89CG8GQF-15E	DRAM DDR3	SPECTEK	2GB			-0.4V~1.975V	0℃~95℃	FBGA-96		8mm×10.5mm							Click view
H5TQ4G83EFR-RDC	DDR3	H5TQ4G83EFR-RDC	DRAM DDR3	SK HYNIX/海力士	4Gb	x8	1866Mbps	-0.4V~1.80V	0℃~85℃	FBGA-78	Mass Production								Click view
H5TC4G83BFR-PBA	DDR3	H5TC4G83BFR-PBA	DRAM DDR3	SK HYNIX/海力士	4Gb	x8	1600Mbps	-0.4V~1.80V	0°C~85°C	FBGA-78	Mass Production								Click view
MT41K512M16HA-125:A	DDR3L	MT41K512M16HA-125:A	DRAM DDR3L	MICRON/美光	8G	512Mx16	1600Mbps	1.35V	0°C~85°C	FBGA-96	Production								Click view
MT41K256M8DA-125:K	DDR3L	MT41K256M8DA-125:K	DRAM DDR3L	MICRON/美光	2Gb	x8	1600 MT/s	1.35V	0°C~95°C	FBGA-78		8mm×10.5mm×1.2mm				FBGA CodeD9PSH			Click view
MT41K128M16JT-125:K	DDR3L	MT41K128M16JT-125:K	DRAM DDR3L	MICRON/美光	2Gb	x16	1600 MT/s	1.35V	0°C~95°C	FBGA-96		8mm×14mm×1.2mm				D9PTK			Click view
H5TC2G83GFR-PBA	DDR3L	H5TC2G83GFR-PBA	DRAM DDR3L	SK HYNIX/海力士	2Gb	x8	1866Mbps	1.283V~1.45V	0℃~85℃	FBGA-78									Click view
H5TQ4G63EFR-RDI	DDR3L	H5TQ4G63EFR-RDI	DRAM DDR3L	SK HYNIX/海力士	4Gb	x16	1866Mbps	1.283V~1.45V	-40℃~85℃	FBGA-96	Mass Production								Click view
H5AN4G6NBJR-UHI	DDR4	H5AN4G6NBJR-UHI	DRAM DDR4	SK HYNIX/海力士	4G	256Mx16	2400Mbps	1.2V	-40°C~95°C	FBGA-96									Click view
H5ANAG6NDMR-VKC	DDR4	H5ANAG6NDMR-VKC	DRAM DDR4	SK HYNIX/海力士	16Gb	x16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production								Click view
H5ANAG6NCJR-XNC	DDR4	H5ANAG6NCJR-XNC	DDR4	SK hynix/海力士	16Gb	x16	3200Mbps			FCBGA			MP					Click view
H5ANBG6NAMR-VKC	DDR4	H5ANBG6NAMR-VKC	DDR4	SK hynix/海力士	32Gb	x16	2666Mbps			FBGA			MP					Click view
K4ABG165WA-MCTD	DDR4	K4ABG165WA-MCTD	DRAM DDR4	SAMSUNG/三星	32Gb	2Gx16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production								Click view
K4ABG165WA-MCWE	DDR4	K4ABG165WA-MCWE	DRAM DDR4	SAMSUNG/三星	32Gb	2Gx16	3200Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production								Click view
K4A4G165WF-BCTD	DDR4	K4A4G165WF-BCTD	DRAM DDR4	SAMSUNG/三星	4Gb	256Mx16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production								Click view
MT40A256M16LY-062E IT:F	DDR4	MT40A256M16LY-062E IT:F	DDR4	MICRON/美光	4Gb	256M x16	1600MHz	1.2V	-40C to +95C	96-ball TFBGA			Production	3200MTPS	CL = 22		DDR4 4G X16 TFBGA	Click view
MT40A512M16LY-062E:E	DDR4	MT40A512M16LY-062E:E	DDR4	MICRON/美光	8Gb	512M x16	1600MHz	1.2V	0C to +95C	96-ball TFBGA			Production	3200MTPS	CL = 22		DDR4 8G X16 TFBGA	Click view
MT40A1G16KD-062E IT:E	DDR4	MT40A1G16KD-062E IT:E	DDR4	MICRON/美光	16Gb				-40C to +95C	D8BHW			Production				Width:x16	Click view
MT40A1G16TB-062E:F	DDR4	MT40A1G16TB-062E:F	DDR4	MICRON/美光	16Gb	1G x16	1600MHz	1.2V	0C to +95C	96-ball TFBGA			Production	3200MTPS	CL = 22		DDR4 16G X16 TFBGA	Click view
K4ABG165WB-MCWE	DDR4	K4ABG165WB-MCWE	DRAM DDR4	SAMSUNG/三星	32Gb	2Gx16	3200Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production								Click view

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