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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K4F8E3S4HD-GFCL
DDR4
DRAM DDR4
SAMSUNG/三星
8Gb
x32
4266Mbps
1.8/1.1/1.1V
-40°C~95°C
FBGA-200
Mass Production
Click view
K4F6E3S4HM-MGCJ
16Gb
3733Mbps
-25°C~85°C
MTA18ASF2G72HZ-2G6E4
MICRON/美光
16GB
2666Mb/s
BGA
EOL
MT40A512M16TB-062E:R
x16
3200 MT/s
0°C~95°C
BGA-96
D9WWP
MT40A512M16LY-062E IT:E TR
512Mx16
1.14V~1.26V
-40℃~95℃
FBGA-96
MT40A512M16LY-062E IT:E
MT40A2G8VA-062E:B
BGA-78
D9XPF
MT40A2G8VA-062E IT:B TR
2Gx8
3200Mbps
1.2V
MT40A2G8JC-062E IT:E TR
MT40A1G16KD-062E:E
1Gx16
TFBGA-96
MT40A1G16KD-062E IT:E TR
H9QT1GGCN6X147
SK hynix/海力士
H9QT2GGMN6X200
K4AAG165WA-BCWE
0°C~85°C
K4AAG165WA-BCTD
2666Mbps
K4A8G165WC-BCWE
Sample
K4A8G085WC-BCWE
1Gx8
FBGA-78
MT40A512M16LY-075:E
D9WFH
K4A8G085WC-BCTD
K4A4G165WE-BCRC
4Gb
256Mx16
2400Mbps
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