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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
H9HCNNN4KUMLHR-NLO
LPDDR4X
DRAM LPDDR4X
SK HYNIX/海力士
4GB
256Mx16
3200Mbps
1.1V
-40°C~105°C
FBGA-200
Click view
H9HCNNN4KMMLHR-NME
0.5GB
x16
3733Mbps
1.8V/1.1V/0.6V
-25℃~85℃
BGA-200
Mass Production
H9HKNNNCRMBVAR-NEH
4266Mbps
-30℃~105℃
BGA-556
H9HCNNNFAMMLXR-NEE
8GB
H9HCNNNCPMMLXR-NEE
H9HCNNNCPMALHR-NEE
K3UH5H50MM-NGCJ
SAMSUNG/三星
32Gb
x64
3733 Mbps
1.8 / 1.1 / 0.6 V
-25 ~ 85 °C
366FBGA
K4U8E3S4AD-CHCL
8 Gb
x32
4266 Mbps
-40 ~ 105 °C
200FBGA
四代超低功耗雙倍數(shù)據(jù)率同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
H9HCNNNBKMMLHR-NME
2GB
Mass production
H9HCNNNBKMALHR-NEE
K4U6E3S4AB-MGCL
16 Gb
200 FBGA
K4UBE3D4AM-GHCL
H9HCNNNCRMBLPR-NEE
SK hynix/海力士
1.8V / 1.1V / 0.6V
432Ball
MP
200Ball
H9HKNNNFBMAVAR-NEH
556Ball
H54G56BYYQX089
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