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MT40A1G16RC-062E:B

DDR4

MT40A1G16RC-062E:B

DRAM DDR4

MICRON/美光

16Gb

x16

0°C~95°C

FBGA

D9XPG

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MT40A2G8JC-062E:E

DDR4

MT40A2G8JC-062E:E

DRAM DDR4

MICRON/美光

16Gb

x8

-40℃~85℃

FBGA

D9ZFV

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MT40A512M16TB-062E:J

DDR4

MT40A512M16TB-062E:J

DRAM DDR4

MICRON/美光

8Gb

x16

3200 MT/s

0°C~95°C

FBGA

D9WWP

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MT40A1G8SA-062E:J

DDR4

MT40A1G8SA-062E:J

DRAM DDR4

MICRON/美光

8Gb

x8

0°C~95°C

FBGA

D9WSM

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MT40A4G4JC-062E

DDR4

MT40A4G4JC-062E

DDR4

MICRON/美光

16Gb

0C to +95C

D9XPC

Sampling

Width:x4

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K4F8E304HB-MGCH

DDR4

K4F8E304HB-MGCH

DRAM DDR4

SAMSUNG/三星

8GB

256Mx32

BGA

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MT40A512M16JY-083E:B

DDR4

MT40A512M16JY-083E:B

DRAM DDR4

MICRON/美光

8Gb

x16

0°C~95°C

BGA

D9TBK

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K4A4G165WF-BCWE

DDR4

K4A4G165WF-BCWE

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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MT40A256M16GE-083E IT:B

DDR4

MT40A256M16GE-083E IT:B

DRAM DDR4

MICRON/美光

4Gb

256Mx16

2400Mbps

1.2V

-40°C~95°C

FBGA-96

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K4A4G165WF-BITD

DDR4

K4A4G165WF-BITD

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2666Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BITD

DDR4

K4A8G165WC-BITD

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2666Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BIWE

DDR4

K4A8G165WC-BIWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WB-BIWE

DDR4

K4A8G165WB-BIWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BCTD

DDR4

K4A8G165WC-BCTD

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A8G165WB-BCRC

DDR4

K4A8G165WB-BCRC

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2400Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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M378A1G44BB0-CWE

DDR4

M378A1G44BB0-CWE

DRAM DDR4

SAMSUNG/三星

8Gb

3200Mbps

1.2V

BGA-260

Mass Production

UDIMM

1R x 16

(1G x 16) x 4

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M471A2K43EB1-CTD

DDR4

M471A2K43EB1-CTD

DRAM DDR4

SAMSUNG/三星

16GB

2666Mbps

1.2V

BGA-260

EOL

SODIMM

2R x 8

(1G x 8) x 16

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M393A2K40DB3-CWE

DDR4

M393A2K40DB3-CWE

DRAM DDR4

SAMSUNG/三星

16GB

3200Mbps

1.2V

BGA-288

Mass Production

RDIMM

1R x 4

(2G x 4) x 18

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NT5AD256M16D4-JRT

DDR4

NT5AD256M16D4-JRT

DDR4

Nanya/南亞

4Gb

x16

3200Mbps

1.2V

-40C~95C

96-ball BGA

Developing

Commercial

標(biāo)準(zhǔn)型DRAM-DDR4

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M378A2K43EB1-CWE

DDR4

M378A2K43EB1-CWE

DRAM DDR4

SAMSUNG/三星

16GB

3200Mbps

1.2V

BGA-288

Mass Production

UDIMM

2R x 8

(1G x 8) x 16

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