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型號
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規(guī)格書
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品牌
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DRAM類型
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容量
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架構(gòu)
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速率
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工作電壓
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工作溫度
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產(chǎn)品詳情
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K4B2G1646F-BYMA |
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DDR3 |
K4B2G1646F-BYMA |
DRAM DDR3 |
SAMSUNG/三星 |
2Gb |
128Mx16 |
1866 Mbps |
1.35V |
0°C~85°C |
96 FBGA |
EOL |
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點擊查看 |
NT5CC256M16ER-EK |
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DDR3 |
NT5CC256M16ER-EK |
DRAM DDR3 |
NANYA/南亞 |
4Gb |
x16 |
1866Mbps |
1.35V |
0°C~95°C |
BGA-96 |
Mass Production |
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8mm×13mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
K4B2G1646F-BCNB |
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DDR3 |
K4B2G1646F-BCNB |
DRAM DDR3 |
SAMSUNG/三星 |
2Gb |
128Mx16 |
2133 Mbps |
1.5V |
0°C~85°C |
FBGA-96 |
Mass Production |
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點擊查看 |
NT5CC128M16JR-EKI |
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DDR3 |
NT5CC128M16JR-EKI |
DRAM DDR3 |
NANYA/南亞 |
2Gb |
x16 |
1866Mbps |
1.35V |
-40°C~95°C |
BGA-96 |
Developing |
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7.5mm×13mm×0.8mm |
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工業(yè)級 |
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點擊查看 |
K4B2G1646F-BCMA |
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DDR3 |
K4B2G1646F-BCMA |
DRAM DDR3 |
SAMSUNG/三星 |
2Gb |
128Mx16 |
1866 Mbps |
1.5V |
0°C~85°C |
FBGA-96 |
Mass Production |
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點擊查看 |
NT5CC128M16IP-DI |
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DDR3 |
NT5CC128M16IP-DI |
DRAM DDR3 |
NANYA/南亞 |
2Gb |
x16 |
1600Mbps |
1.35V |
0°C~95°C |
BGA-96 |
Mass Production |
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8mm×13mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
K4B2G0846F-BYMA |
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DDR3 |
K4B2G0846F-BYMA |
DRAM DDR3 |
SAMSUNG/三星 |
2Gb |
256Mx8 |
1866Mbps |
1.35V |
0°C~85°C |
FBGA-78 |
Mass Production |
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點擊查看 |
NT5CB512M8EQ-FL |
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DDR3 |
NT5CB512M8EQ-FL |
DRAM DDR3 |
NANYA/南亞 |
4Gb |
x8 |
2133Mbps |
1.5V |
0°C~95°C |
BGA-78 |
Mass Production |
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8mm×10.5mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
K4B1G1646I-BYK0 |
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DDR3 |
K4B1G1646I-BYK0 |
DRAM DDR3 |
SAMSUNG/三星 |
1Gb |
64Mx16 |
1600Mbps |
1.35V |
0°C~85°C |
FBGA-96 |
Mass Production |
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點擊查看 |
NT5CB256M16ER-FL |
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DDR3 |
NT5CB256M16ER-FL |
DRAM DDR3 |
NANYA/南亞 |
4Gb |
x16 |
2133Mbps |
1.5V |
0°C~95°C |
BGA-96 |
Mass Production |
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8mm×13mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
NT5CB128M16JR-FL |
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DDR3 |
NT5CB128M16JR-FL |
DRAM DDR3 |
NANYA/南亞 |
2Gb |
x16 |
2133Mbps |
1.5V |
0°C~95°C |
BGA-96 |
Developing |
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7.5mm×13mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
K4B2G0846F-BCMA |
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DDR3 |
K4B2G0846F-BCMA |
DRAM DDR3 |
SAMSUNG/三星 |
2Gb |
256Mx8 |
1866Mbps |
1.5V |
0°C~85°C |
FBGA-78 |
Mass Production |
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點擊查看 |
NT5CC256M8IN-DI |
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DDR3 |
NT5CC256M8IN-DI |
DRAM DDR3 |
NANYA/南亞 |
2Gb |
x8 |
1600Mbps |
1.35V |
0°C~95°C |
VFBGA-78 |
Mass Production |
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8mm×10.5mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
NT5CB256M16DP-EK |
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DDR3 |
NT5CB256M16DP-EK |
DRAM DDR3 |
NANYA/南亞 |
4Gb |
x16 |
1866Mbps |
1.5V |
0°C~95°C |
VFBGA-96 |
Mass Production |
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9mm×13mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
K4E8E324EB-EGCG |
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DDR3 |
K4E8E324EB-EGCG |
DRAM DDR3 |
SAMSUNG/三星 |
8Gb |
x32 |
2133Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
EOL |
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點擊查看 |
NT5CC256M8JQ-EK |
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DDR3 |
NT5CC256M8JQ-EK |
DRAM DDR3 |
NANYA/南亞 |
2Gb |
x8 |
1866Mbps |
1.35V |
0°C~95°C |
TFBGA-78 |
Developing |
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7.5mm×10.5mm×0.8mm |
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商業(yè)級 |
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點擊查看 |
NT5CB64NGP-EK |
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DDR3 |
NT5CB64NGP-EK |
DRAM DDR3 |
NANYA/南亞 |
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FBGA-96 |
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點擊查看 |
H5TQ2G83GFR-RDC |
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DDR3 |
H5TQ2G83GFR-RDC |
DRAM DDR3 |
SK HYNIX/海力士 |
2Gb |
x8 |
1866Mbps |
-0.4V~1.80V |
0℃~85℃ |
FBGA-78 |
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點擊查看 |
H5TQ4G63EFR-RDC |
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DDR3 |
H5TQ4G63EFR-RDC |
DRAM DDR3 |
SK HYNIX/海力士 |
4Gb |
x16 |
1866Mbps |
-0.4V~1.80V |
0℃~85℃ |
FBGA-96 |
Mass Production |
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點擊查看 |
H5TC4G83EFR-PBA |
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DDR3 |
H5TC4G83EFR-PBA |
DRAM DDR3 |
SK HYNIX/海力士 |
4Gb |
x8 |
1600Mbps |
-0.4V~1.80V |
0℃~85℃ |
FBGA-78 |
Mass Production |
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點擊查看 |
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