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型號
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規(guī)格書
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DRAM類型
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容量
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架構(gòu)
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速率
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工作電壓
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工作溫度
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產(chǎn)品詳情
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K4A8G165WB-BIWE |
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K4A8G165WB-BIWE |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
3200Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
Mass Production |
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點擊查看 |
MZVL2512HCJQ-00$00/07 |
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MZVL2512HCJQ-00$00/07 |
SSD |
SAMSUNG/三星 |
512GB |
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BGA |
Mass Production |
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PCIe 4.0x4 |
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PM9A1 |
6900 MB/s |
5000 MB/s |
800K IOPS |
800K IOPS |
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點擊查看 |
K4UCE3Q4AA-MGCL |
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K4UCE3Q4AA-MGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
64Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Mass Production |
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點擊查看 |
K4UCE3Q4AA-MGCR |
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K4UCE3Q4AA-MGCR |
DRAM LPDDR4X |
SAMSUNG/三星 |
64GB |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Sample |
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點擊查看 |
K4E8E324EB-EGCF |
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K4E8E324EB-EGCF |
DRAM LPDDR3 |
SAMSUNG/三星 |
48Gb |
x32 |
1866Mbps |
1.8/1.2/1.2V |
-25°C~85°C |
FBGA-178 |
Mass Production |
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點擊查看 |
KLMCG4JETD-B041 |
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KLMCG4JETD-B041 |
eMMC |
SAMSUNG/三星 |
64GB |
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1.8/3.3V |
-25°C~85°C |
FBGA-153 |
Mass Production |
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11.5mm x 13mm x 1.0mm |
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5.1 |
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HS400 |
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點擊查看 |
K4A8G165WC-BCTD |
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K4A8G165WC-BCTD |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
2666Mbps |
1.2V |
0°C~85°C |
FBGA-96 |
Mass Production |
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點擊查看 |
K4A8G165WB-BCRC |
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K4A8G165WB-BCRC |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
2400Mbps |
1.2V |
0°C~85°C |
FBGA-96 |
Mass Production |
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點擊查看 |
M378A1G44BB0-CWE |
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M378A1G44BB0-CWE |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
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3200Mbps |
1.2V |
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BGA-260 |
Mass Production |
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UDIMM |
1R x 16 |
(1G x 16) x 4 |
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點擊查看 |
MZVLB1T0HBLR-00000 |
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MZVLB1T0HBLR-00000 |
SSD |
SAMSUNG/三星 |
1TB |
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Mass Production |
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PCIe Gen3 x4 |
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PM981a |
3500 MB/s |
3000 MB/s |
580K IOPS |
500K IOPS |
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點擊查看 |
M471A2K43EB1-CTD |
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M471A2K43EB1-CTD |
DRAM DDR4 |
SAMSUNG/三星 |
16GB |
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2666Mbps |
1.2V |
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BGA-260 |
EOL |
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SODIMM |
2R x 8 |
(1G x 8) x 16 |
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點擊查看 |
M393A2K40DB3-CWE |
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M393A2K40DB3-CWE |
DRAM DDR4 |
SAMSUNG/三星 |
16GB |
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3200Mbps |
1.2V |
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BGA-288 |
Mass Production |
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RDIMM |
1R x 4 |
(2G x 4) x 18 |
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點擊查看 |
M378A2K43EB1-CWE |
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M378A2K43EB1-CWE |
DRAM DDR4 |
SAMSUNG/三星 |
16GB |
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3200Mbps |
1.2V |
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BGA-288 |
Mass Production |
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UDIMM |
2R x 8 |
(1G x 8) x 16 |
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點擊查看 |
K9F5608U0D |
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K9F5608U0D |
FLASH |
SAMSUNG/三星 |
32M |
x8 |
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2.7V~3.6V |
-10°C~125°C |
FBGA-63 |
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點擊查看 |
K4UBE3D4AA-MGCR |
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K4UBE3D4AA-MGCR |
DRAM LPDDR4X |
SAMSUNG/三星 |
32Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Sample |
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點擊查看 |
K4U6E3S4AA-MGCL |
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K4U6E3S4AA-MGCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
16Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-200 |
Mass Production |
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點擊查看 |
K3UH7H70AM-JGCR |
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K3UH7H70AM-JGCR |
DRAM LPDDR4X |
SAMSUNG/三星 |
64Gb |
x64 |
4266Mbps |
1.8/1.1/0.6V |
-25°C~85°C |
FBGA-432 |
Sample |
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點擊查看 |
K4U8E3S4AD-GFCL |
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K4U8E3S4AD-GFCL |
DRAM LPDDR4X |
SAMSUNG/三星 |
8Gb |
x32 |
4266Mbps |
1.8/1.1/0.6V |
-40°C~95°C |
FBGA-200 |
Mass Production |
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點擊查看 |
K4FBE3D4HM-MGCJ |
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K4FBE3D4HM-MGCJ |
DRAM DDR4 |
SAMSUNG/三星 |
32Gb |
x32 |
3733Mbps |
1.8/1.1/1.1V |
-25°C~85°C |
FBGA-200 |
Mass Production |
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點擊查看 |
K4F8E3S4HD-GFCL |
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K4F8E3S4HD-GFCL |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
x32 |
4266Mbps |
1.8/1.1/1.1V |
-40°C~95°C |
FBGA-200 |
Mass Production |
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點擊查看 |
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