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產(chǎn)品品牌

三星海力士鎧俠美光南亞閃迪
產(chǎn)品類別

DRAM SSD eMMC eMCP FLASH UFS

產(chǎn)品型號(hào)

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型號(hào)	DRAM類型	容量	架構(gòu)	速率	工作電壓	工作溫度	產(chǎn)品詳情
MT47H128M16RT-25E:C	MT47H128M16RT-25E:C	DDR2	MICRON/美光	2Gb	128M x16	400MHz	1.8V	0C to +85C	84-ball FBGA		Production	800MTPS	CL = 5		DDR2 2G X16 FBGA	點(diǎn)擊查看
MT41K64M16TW-107 IT:J	MT41K64M16TW-107 IT:J	DDR3	MICRON/美光	1Gb	64M x16	933MHz	1.35V	-40C to +95C				1866MTPS	CL = 13		DDR3 1G X16 TFBGA	點(diǎn)擊查看
MT41K256M8DA-125 IT:K	MT41K256M8DA-125 IT:K	DDR3	MICRON/美光	2Gb	256M x8	800MHz	1.35V	-40C to +95C	78-ball FBGA		Production	1600MTPS	CL = 11		DDR3 2G X8 FBGA	點(diǎn)擊查看
MT41K128M16JT-125	MT41K128M16JT-125	DDR3	MICRON/美光	2Gb	x16			0C to +95C	D9PTK		Production					點(diǎn)擊查看
MT41K512M8DA-107 IT:P	MT41K512M8DA-107 IT:P	DDR3	MICRON/美光	4Gb	512M x8	933MHz	1.35V	-40C to +95C	78-ball TFBGA		Production	1866MTPS	CL = 13		DDR3 4G X8 TFBGA	點(diǎn)擊查看
MT40A256M16GE-083E	MT40A256M16GE-083E	DDR4 SDRAM	MICRON/美光	4Gb	x16	1200MHz	1.2V	0C to +95C	96-ball TFBGA	256Mb	Production		CL = 16		Cycle Time:0.833ns	點(diǎn)擊查看
MT40A256M16LY-062E IT:F	MT40A256M16LY-062E IT:F	DDR4	MICRON/美光	4Gb	256M x16	1600MHz	1.2V	-40C to +95C	96-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 4G X16 TFBGA	點(diǎn)擊查看
MT40A512M16LY-062E:E	MT40A512M16LY-062E:E	DDR4	MICRON/美光	8Gb	512M x16	1600MHz	1.2V	0C to +95C	96-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 8G X16 TFBGA	點(diǎn)擊查看
MT40A1G16KD-062E IT:E	MT40A1G16KD-062E IT:E	DDR4	MICRON/美光	16Gb				-40C to +95C	D8BHW		Production				Width:x16	點(diǎn)擊查看
MT40A1G16TB-062E:F	MT40A1G16TB-062E:F	DDR4	MICRON/美光	16Gb	1G x16	1600MHz	1.2V	0C to +95C	96-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 16G X16 TFBGA	點(diǎn)擊查看
MT40A1G16TB-062E IT:F	MT40A1G16TB-062E IT:F	DDR4	MICRON/美光	16Gb	1G x16	1600MHz	1.2V	-40C to +95C	96-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 16G X16 TFBGA	點(diǎn)擊查看
MT40A2G16TBB-062E:F	MT40A2G16TBB-062E:F	DDR4	MICRON/美光	32Gb	2G x16	1600MHz	1.2V	0C to +95C	96-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 32G X16 TFBGA	點(diǎn)擊查看
MT40A1G8SA-075:E	MT40A1G8SA-075:E	DDR4	MICRON/美光	8Gb	1G x8	1333MHz	1.2V	0C to +95C	78-ball TFBGA		Production	2666MTPS	CL = 19		DDR4 8G X8 TFBGA	點(diǎn)擊查看
MT40A1G8SA-062E:E	MT40A1G8SA-062E:E	DDR4	MICRON/美光	8Gb	1G x8	1600MHz	1.2V	0C to +95C	78-ball TFBGA			3200MTPS	CL = 22		DDR4 8G X8 TFBGA	點(diǎn)擊查看
MT40A1G8SA-062E:R	MT40A1G8SA-062E:R	DDR4	MICRON/美光	8Gb	1G x8	1600MHz	1.2V	0C to +95	78-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 8G X8 TFBGA	點(diǎn)擊查看
MT40A1G8SA-062E IT:E	MT40A1G8SA-062E IT:E	DDR4	MICRON/美光	8Gb	1G x8	1600MHz	1.2V	-40C to +95C	78-ball TFBGA		Production	3200MTPS	CL = 22		DDR4 8G X8 TFBGA	點(diǎn)擊查看
MT40A2G8SA-062E:F	MT40A2G8SA-062E:F	DDR4	MICRON/美光	16Gb	2G x8	1600MHz	1.2V	0C to +95C	78-ball TFBGA			3200MTP	CL = 22		DDR4 16G X8 TFBGA	點(diǎn)擊查看
MT40A2G8JC-062E IT:E	MT40A2G8JC-062E IT:E	DDR4	MICRON/美光	16Gb				0C to +95C	D9ZFV		Sampling				Width：x8	點(diǎn)擊查看
MT53D512M32D2DS-046 WT:D	MT53D512M32D2DS-046 WT:D	DRAM	MICRON/美光												SDRAM存儲(chǔ)器	點(diǎn)擊查看
MT53D512M32D2DS-046 AAT:D	MT53D512M32D2DS-046 AAT:D	LPDDR4	MICRON/美光	16Gb	512M x32	2133MHz	0.6V	-40C to +105C	200-ball WFBGA			4266MTPS	CL = Programmable	COMPONENT	LPDDR4 16G X32 WFBGA	點(diǎn)擊查看

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