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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
KLM8G1GEAC-B001
eMMC
SAMSUNG/三星
8GB
2.7V~3.6V
-25°C~85°C
FBGA-153
11.5mm x 13mm x 1.0mm
4.5
HS200
Click view
KLM4G1FETE-B041
4GB
1.8~3.3V
Mass Production
11mm x 10mm x 0.8mm
5.1
HS400
KMGP6001BA-B514
eMCP
32GB
1866Mbps
FBGA-221
EOL
eMMC 5.1
16Gb
LPDDR3
KMQE60013B-B318
16GB
KMGX6001BA-B514
24Gb
KMFN60012B-B214
8Gb
KMDX60018M-B425
4266Mbps
FBGA-254
LPDDR4X
KMDP6001DA-B425
64GB
32Gb
KMDH6001DM-B422
3733Mbps
K4AAG165WA-BCWE
DRAM DDR4
1Gx16
3200Mbps
1.2V
0°C~85°C
FBGA-96
K4AAG165WA-BCTD
2666Mbps
K4A8G165WC-BCWE
512Mx16
Sample
K4A8G085WC-BCWE
1Gx8
FBGA-78
K4A8G085WC-BCTD
K4A4G165WE-BCRC
4Gb
256Mx16
2400Mbps
K4A4G085WE-BCRC
512Mx8
K4B8G1646D-MYK0
DRAM DDR3
1600Mbps
1.35V
K4B4G1646E-BCMA
1.5V
K4B4G0846E-BCNB
2133Mbps
2000/REEL
K4B2G1646F-BYMA
2Gb
128Mx16
1866 Mbps
96 FBGA
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